Method for erasing data of a non-volatile semiconductor memory i

Details Method for erasing data of a non-volatile semiconductor memory i Method for erasing data of a non-volatile semiconductor memory i

1980-11-17

1983-07-12

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Erase

250573, G11C 1300

Patent

active

043934790

ABSTRACT:
A non-volatile semiconductor integrated circuit has floating poly-silicon gates on the channel regions of memory cells. The information electronically stored in said floating gates is erased by the irradiation of an X-ray with predetermined amount. The writing step prior to X-ray irradiation causes the uniform erase of entire memory cells. The circuits other than memory cells are protected by a shielding coating against the X-ray irradiation.

REFERENCES:
patent: 3731119 (1973-05-01), Matzem
patent: 3833824 (1974-09-01), Parks

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