Method for epitaxial lift-off for oxide films utilizing supercon

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – With material removal by etching – laser ablation – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1566361, 216 40, 216101, 216105, 216106, 4274193, 117915, 117247, B32B 3124, C04B 3545

Patent

active

055277667

ABSTRACT:
Novel structures and methods utilize layered copper oxide release materials to separate oxide films from growth substrates. Generally, the method comprises the steps of: first, forming a layered copper oxide sacrificial release material on a growth substrate, in the preferred embodiment being the high temperature superconductor YBCO grown on a compatible substrate such as LaAlO3, second, forming an oxide film on the layered copper oxide release material, in the preferred embodiment, a ferroelectric, an optical material or a oxide film compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2, and third, etching the layered copper oxide release material so as to separate the oxide film from the growth substrate. Optionally, additional layers may be grown on the oxide film prior to etching. In the preferred embodiment, when high temperature superconducting devices are formed, the oxide films would be a material such as SrTiO3 or CeO2, upon which yet another high temperature superconducting film would be grown. After patterning and protecting the etched film, the structure may be etched. Generally, any of the layered copper oxide films, such as YBCO, TlCaBaCuO, LaSrCuOx and BiSrCaCuOx can be used. Oxide films having a substantially lower etch rate than the layered copper oxide materials incompatible with growth on the layered copper oxide materials may be utilized.

REFERENCES:
patent: 4537818 (1985-08-01), Quinby
patent: 4843060 (1989-06-01), Lessoff et al.
patent: 4921335 (1990-05-01), Ditman
patent: 4929575 (1990-05-01), Khoury et al.
patent: 4956335 (1990-09-01), Agostinelli et al.
patent: 4988674 (1991-01-01), Mir et al.
patent: 5132282 (1992-06-01), Newman et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5270294 (1993-12-01), Wu et al.
patent: 5274249 (1993-12-01), Xi et al.
patent: 5292717 (1994-03-01), Roas
patent: 5323023 (1994-06-01), Fork
Howard, R. E., Applied Phys. Lett. 33(12) (1978) 1934 "A Refractory Lift Off Process . . . ".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for epitaxial lift-off for oxide films utilizing supercon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for epitaxial lift-off for oxide films utilizing supercon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for epitaxial lift-off for oxide films utilizing supercon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-222854

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.