Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-17
2000-10-24
Fahmy, Wael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438689, 438696, 438740, 257501, 257646, 257900, H01L 2144
Patent
active
061367001
ABSTRACT:
A self-aligned contact (122) to a substrate (12) of a semiconductor device (100) is formed using a stopping layer (110) overlying the substrate (12). The stopping layer (110) comprising a material selected from the group consisting of silicon-rich nitride, silicon-rich oxide, carbon-rich nitride, silicon carbide, boron nitride, organic spin-on-glass, graphite, diamond, carbon-rich oxide, nitrided oxide, and organic polymer. The stopping layer (110) promotes better semiconductor device (100) performance by contributing to greater selectivity with respect to an etch process used to remove an insulating layer (112) formed overlying the stopping layer (110).
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Anderson Dirk Noel
McAnally Peter S.
McKee Jeffrey Alan
Brady III W. James
Coleman William David
Fahmy Wael
Garner Jacqueline J.
Telecky Jr. Frederick J.
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