Method for enhancing the adhesion of photoresist to polysilicon

Details Method for enhancing the adhesion of photoresist to polysilicon Method for enhancing the adhesion of photoresist to polysilicon

1978-02-22

1979-11-27

Massie, Jerome W.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156657, 156662, 156668, 204164, 427 38, 427 93, 427294, 427399, 156643, 1566591, H01L 21306, H01L 21312, H01L 21316

Patent

active

041760034

ABSTRACT:
An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.

REFERENCES:
patent: 3880684 (1975-04-01), Abe
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3940506 (1976-02-01), Heinecke
patent: 4026733 (1977-03-01), Owen et al.
patent: 4103064 (1978-07-01), McAlear et al.
Ligenza, J. R., "Silicon . . . Microwaves" Journal of Applied Sciences, vol. 36, No. 9 (Sep. 65), pp. 2703-2707.

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