Method for enhancing substrate processing

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S710000, C134S001000, C134S001100

Reexamination Certificate

active

06878636

ABSTRACT:
Embodiments of the invention generally provide a method for enhancing chemical reactions within a substrate processing chamber during a substrate processing sequence. The method generally includes supporting a substrate in a face up position on a substrate support member, providing a process gas into the processing chamber, and striking a plasma of the process gas. The method further includes imparting at least one impulse to the substrate support member that is substantially perpendicular to a substrate surface, the at least one impulse being of sufficient magnitude to agitate the substrate surface to expand an exposed surface area of the substrate surface.

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