Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-12
2005-04-12
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C134S001000, C134S001100
Reexamination Certificate
active
06878636
ABSTRACT:
Embodiments of the invention generally provide a method for enhancing chemical reactions within a substrate processing chamber during a substrate processing sequence. The method generally includes supporting a substrate in a face up position on a substrate support member, providing a process gas into the processing chamber, and striking a plasma of the process gas. The method further includes imparting at least one impulse to the substrate support member that is substantially perpendicular to a substrate surface, the at least one impulse being of sufficient magnitude to agitate the substrate surface to expand an exposed surface area of the substrate surface.
REFERENCES:
patent: 5298720 (1994-03-01), Cuomo et al.
patent: 5387777 (1995-02-01), Bennett et al.
patent: 5522933 (1996-06-01), Geller et al.
patent: 5531862 (1996-07-01), Otsubo et al.
patent: 5665609 (1997-09-01), Mori
patent: 5727332 (1998-03-01), Thrasher et al.
patent: 5820329 (1998-10-01), Derbinski et al.
patent: 5849135 (1998-12-01), Selwyn
patent: 5969934 (1999-10-01), Larsen
patent: 5971586 (1999-10-01), Mori
patent: 6106634 (2000-08-01), Ghanayem et al.
patent: 6192601 (2001-02-01), Ghanayem et al.
patent: 6676800 (2004-01-01), Festa et al.
Bailey Joel Brad
Hunter Reginald
Applied Materials Inc.
Moser Patterson & Sheridan LLP
Umez-Eronini Lynette T.
Vinh Lan
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