Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-11-12
2000-10-03
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438905, 438683, H01L 2144
Patent
active
061272698
ABSTRACT:
A chemical vapor deposition (CVD) method for forming with enhanced sheet resistance uniformity tungsten silicide layers upon substrates. There is formed upon a first substrate within a chemical vapor deposition (CVD) reactor chamber a first tungsten silicide layer through a chemical vapor deposition (CVD) method. The first substrate is then removed from the chemical vapor deposition (CVD) reactor chamber. The chemical vapor deposition (CVD) reactor chamber is then cleaned with a fluorine containing plasma and subsequently purged with a mixture of silane and an inert gas. There may then be formed with enhanced sheet resistance uniformity upon a second substrate within the chemical vapor deposition (CVD) reactor chamber a second tungsten silicide layer through the chemical vapor deposition (CVD) method.
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Chu May-Ling
Liaw Yung-Haw
Ackerman Stephen B.
Everhart Caridad
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company
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