Method for enhancing hydrogenation of thin film transistors usin

Details Method for enhancing hydrogenation of thin film transistors usin Method for enhancing hydrogenation of thin film transistors usin

1996-10-11

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438162, 438163, 438164, H01L 218244

Patent

active

058997113

ABSTRACT:
A method for enhancing hydrogenation of an oxide-coated polycrystalline silicon thin-film transistor or devices includes depositing a metal capping layer on the device prior to hydrogenation. In addition, a method for batch hydrogenation of substrates or plates carrying the oxide-coated polycrystalline silicon devices includes placing the plates in a downstream flow from a hydrogen plasma.

REFERENCES:
patent: 3620844 (1971-11-01), Wicke
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5470763 (1995-11-01), Hamada
patent: 5504020 (1996-04-01), Aomori et al.
patent: 5541119 (1996-07-01), Kodama
patent: 5600155 (1997-02-01), Wu
patent: 5627085 (1997-05-01), Gosain et al.
patent: 5686335 (1997-11-01), Wuu et al.
patent: 5728610 (1998-03-01), Gosain et al.
Stanely Wolf, Silicon Processing for the VLSI Era, vol. 1, pp. 169-174, 1986.

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