Method for enhancing etch uniformity useful in etching submicron

Details Method for enhancing etch uniformity useful in etching submicron Method for enhancing etch uniformity useful in etching submicron

1993-03-10

1994-08-16

Thomas, Tom

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156650, 156651, 156652, 156653, H01L 21306

Patent

active

053383958

ABSTRACT:
An etch process wherein halogen ions are employed to bombard a patterned nitride layer thereby creating substantially vertical sidewalls, especially useful when etching submicron features.
A process in which NF.sub.3 ions are combined with halogen ions in a reactive ion etcher to etch a patterned layer, followed, in situ, by an overetch of NF.sub.3 ions and an ionized hydrogen halide. An inert gas can be added to further increase the uniformity of the etch.

REFERENCES:
patent: 4484979 (1984-11-01), Stocker
patent: 4568410 (1986-02-01), Thornquist
patent: 4717447 (1988-01-01), Dieleman et al.
patent: 4793897 (1988-12-01), Dunfield et al.
patent: 5167762 (1992-12-01), Carr et al.
patent: 5180466 (1993-01-01), Shin
Sparks; "Plasma Etching of Si, SiO.sub.2, Si.sub.3 N.sub.4, and Resist with Fluorine, Chlorine, and Bromine Compounds"; J. Electrochem. Soc; vol. 139, No. 6, Jun. 1992, pp. 1736-1741.
Hayasaka et al., "Highly Selective Etching of Si.sub.3 N.sub.4 Over SiO.sub.2 Employing a Downstream Type Reactor", Solid State Technology Apr. 1988; pp. 127-130.

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