Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-07-25
1996-05-28
Breneman, R. Bruce
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419218, 20419216, 20419222, 20419225, 437247, 148DIG3, C23C 1434, H01L 21324
Patent
active
055207855
ABSTRACT:
A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exposure to boiling water for times up to twenty minutes and maintain a refractive index, N.sub.f, greater than 2.0, and a preferred crystalline orientation ratio, I(002)/I(102), in excess of 1000.
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Evans Keenan L.
Liaw Hang M.
Lin Jong-Kai
Bernstein Aaron B.
Breneman R. Bruce
Chen George C.
McDonald Rodney G.
Motorola Inc.
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