Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-08-15
2006-08-15
Barreca, Nicole (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S311000, C430S327000, C430S329000
Reexamination Certificate
active
07090965
ABSTRACT:
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.
REFERENCES:
patent: 5368977 (1994-11-01), Yoda et al.
patent: 5443998 (1995-08-01), Meyer
patent: 5482174 (1996-01-01), Namiki et al.
patent: 6143652 (2000-11-01), Yu
patent: 6174816 (2001-01-01), Yin et al.
patent: 6218085 (2001-04-01), Molloy et al.
patent: 6225219 (2001-05-01), Lee et al.
patent: 2001/0045646 (2001-11-01), Shields et al.
patent: 2002/0009595 (2002-01-01), Hong et al.
patent: 2002/0031726 (2002-03-01), Hsieh et al.
patent: 2002/0105728 (2002-08-01), Yamaguchi et al.
patent: 2002/0123161 (2002-09-01), Ushiki et al.
patent: 2003/0087518 (2003-05-01), Chen et al.
patent: 2004/0079729 (2004-04-01), Chen et al.
patent: 2004/0081923 (2004-04-01), Wu et al.
Larry F. Thompson et al,Introduction to Microlithography, Second Edition, 1994, ACS Professional Reference Book, pp. 6-7, USA.
Chen Yi-Nan
Huang Teng-Yen
Wu Wen-Bin
Wu Yuan-Shan
Barreca Nicole
Nanya Technology Corporation
Quintero Law Office
LandOfFree
Method for enhancing adhesion between reworked photoresist... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for enhancing adhesion between reworked photoresist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for enhancing adhesion between reworked photoresist... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3708580