Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-01
2011-03-01
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S798000, C257SE21584
Reexamination Certificate
active
07897505
ABSTRACT:
A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging.
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Chang Hui-Lin
Ko Chung-Chi
Li Lih-Ping
Lin Chih-Hsien
Lu Yung-Cheng
Birch & Stewart Kolasch & Birch, LLP
Lee Hsien-Ming
Parendo Kevin
Taiwan Semiconductor Manufacturing Co. Ltd.
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