Method for enhanced dielectric film uniformity

Details Method for enhanced dielectric film uniformity Method for enhanced dielectric film uniformity

1999-09-28

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438765, 438771, B05D 306, H01L 2144

Patent

active

061566756

ABSTRACT:
The present invention relates to an apparatus and method for depositing a film on a wafer. A reactor for depositing a film on a surface of a wafer comprises a processing chamber having an electrode, a ceramic wafer support supporting the wafer and separated from the electrode by a distance of between 230 and 240 millimeters, a gas inlet supplying gas reactants, and a radio frequency inlet supplying radio frequency energy. The reactor further comprises a heating chamber having at least one heat source which heats the wafer. A method for depositing a film on a surface of a semiconductor wafer comprises providing a processing chamber having a ceramic wafer support supporting the wafer and an electrode, separating the electrode from the ceramic wafer support by a distance of between 230 and 240 millimeters, supplying radio frequency energy into the processing chamber, supplying gas reactants into the processing chamber, and heating the wafer.

REFERENCES:
patent: 5851602 (1998-12-01), Law et al.
patent: 5895259 (1999-04-01), Carter et al.

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