Method for end point detection in a plasma etching process

Details Method for end point detection in a plasma etching process Method for end point detection in a plasma etching process

1980-07-22

1982-05-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156643, 156646, 204192E, 204298, 356445, B44C 122, C03C 1500, C03C 2506

Patent

active

043280684

ABSTRACT:
An improved plasma etching apparatus having a light pipe inserted through the chamber wall for coupling light emitted by different chemical species out of the chamber. The light pipe collects the emission directly or after reflection from the coated surface of a substrate. Stabilization of the intensity of the collected emission is indicative of the end point of the etching process.
The invention includes a method for detecting the end point of the etching process by monitoring the intensity of light emitted by a component of a gas contained in the chamber which passes out of the chamber through the light pipe. The light may be coupled directly into the light pipe or the light pipe may be so positioned as to detect the emitted light after it is reflected from the surface of the substrate. The intensity of the light is monitored until it stabilizes, indicating that the etching process is complete.

REFERENCES:
patent: 4136951 (1979-01-01), Macourt
patent: 4245154 (1981-01-01), Uehara et al.
patent: 4263088 (1981-04-01), Gorin
patent: 4263089 (1981-04-01), Keller
Applied Spectroscopy, vol. 31, No. 1, 1977, Simple Optical Devices for Detection of Radiofrequency Oxygen Plasma Stripping of Photoresists by E. O. Degenkolb et al., pp. 40-42.
Solid State Technology, Feb. 1979, Plasma Etch Monitoring with Laser Interferometry by H. H. Busta et al., pp. 61-64.

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