Method for end point detection during plasma etching

Details Method for end point detection during plasma etching Method for end point detection during plasma etching

1977-12-05

1980-04-15

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156655, 356364, 356368, 356381, 356382, H01L 21306

Patent

active

041982614

ABSTRACT:
A method and apparatus for detecting the end point of a plasma etching process comprising the use of an optical technique in which light is beamed on the layer to be etched and the resulting beam that is reflected and refracted is detected. Sharply different values of light intensity can be detected when the desired layer is etched and the next layer receives the light beam. A laser is preferably used to obtain an intense and substantially uniform frequency light source.

REFERENCES:
patent: 3612692 (1971-10-01), Kruppa
patent: 3953265 (1976-04-01), Hood
patent: 3985447 (1976-10-01), Aspnes
patent: 3992104 (1976-11-01), Watanabe
patent: 4035082 (1977-07-01), Kirschen
patent: 4039370 (1977-08-01), Kleinknecht
patent: 4068016 (1978-01-01), Wilmanns
patent: 4141780 (1979-02-01), Kleinknecht
Gottesfeld et al, "The Monitoring . . . Ellipometes" Surface Science, vol. 44, No. 2 (Aug.1974), pp. 377-388.
Rode et al, "Crystal Etch . . . Interferometry" The Review of Scientific Instruments, vol. 41, No. 5 (May 1970), pp. 672-675.
Herring et al, "Multiple . . . System" IBM Technical Disclosure Bulletin., vol. 17. No. 7 (Dec. 1874), pp. 1946-1947.
Moritz, "Continuous . . . Layers" IBM Technical Disclosure Bulletin, vol. 19 No. 7 (Dec. 76). pp. 2579-2580.

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