Method for eliminating laser-induced substrate fissures associat

Details Method for eliminating laser-induced substrate fissures associat Method for eliminating laser-induced substrate fissures associat

1984-06-04

1985-08-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156662, 156617R, 156620, 156DIG64, 156DIG80, 156DIG111, 156DIG88, 219121LE, 219121LF, B44C 122, C03C 1500, C03C 2506, C30B 1306

Patent

active

045362513

ABSTRACT:
A method for eliminating laser induced substrate fissures associated with laser annealed crystallization of patterned silicon areas, for increasing the yield of useable single crystal areas. The fissures are created by enhanced etching of the substrate, at the exposed edges of the areas, during the removal of a dimension stabilizing encapsulating layer. A post crystallization, high temperature anneal, in an oxidizing atmosphere prevents the enhanced etching of the substrate.

REFERENCES:
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4388145 (1983-06-01), Hawkins et al.

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