Method for eliminating charge damage during etching of conductin

Details Method for eliminating charge damage during etching of conductin Method for eliminating charge damage during etching of conductin

1996-09-27

1998-06-16

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438669, 438622, 438707, 438709, 438710, 438712, 438719, 438720, 438742, H01L 2144

Patent

active

057670064

ABSTRACT:
A plasma etch method for patterning for use within an integrated circuit a blanket conductor layer such that an integrated circuit layer adjoining the blanket conductor layer is not damaged when the blanket conductor layer is patterned to form a patterned conductor layer through the plasma etch method. There is first provided a semiconductor substrate. There is then formed over the semiconductor substrate a blanket conductor layer, where the blanket conductor layer communicates electrically with the semiconductor substrate in a fashion such that an electrical charge is shunted from the blanket conductor layer into the semiconductor substrate when the blanket conductor layer is patterned to form the patterned conductor layer through the plasma etch method. There is then patterned through the plasma etch method the blanket conductor layer to form the patterned conductor layer.

REFERENCES:
patent: 5049514 (1991-09-01), Mori
patent: 5393701 (1995-02-01), Ko et al.
S.Wolf, "Silicon Processing for the VLSI Era-vol. 2", Lattice Press, Sunset Beach , CA, pp.160-162 no date.

Affiliated with

Also associated with

Rating

Method for eliminating charge damage during etching of conductin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for eliminating charge damage during etching of conductin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for eliminating charge damage during etching of conductin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1725526