Method for electrochemically processing a workpiece

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S631000, C438S633000, C438S678000, C438S691000, C438S692000

Reexamination Certificate

active

07115510

ABSTRACT:
The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.

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patent: 6346479 (2002-02-01), Woo et al.
patent: 6350364 (2002-02-01), Jang
patent: 6447668 (2002-09-01), Wang
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patent: 2003/0015435 (2003-01-01), Volodarsky et al.
patent: 2000-208443 (2000-07-01), None
patent: WO/0132362 (2001-05-01), None
Reid, J., et al., “Factors Influencing Damascene Feature Fill Using Copper PVD and Electroplating”,Solid State Technology,43(7):86-88, 92, 96, 98 and 103 (Jul. 2000).

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