Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-03
2006-10-03
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S633000, C438S678000, C438S691000, C438S692000
Reexamination Certificate
active
07115510
ABSTRACT:
The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.
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Reid, J., et al., “Factors Influencing Damascene Feature Fill Using Copper PVD and Electroplating”,Solid State Technology,43(7):86-88, 92, 96, 98 and 103 (Jul. 2000).
Basol Bulent M.
Talieh Homayoun
Uzoh Cyprian E.
ASM Nutool, Inc.
Knobbe Martens Olson & Bear LLP
Nguyen Thanh
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