Method for efficiently removing by-products produced in dry-etch

Details Method for efficiently removing by-products produced in dry-etch Method for efficiently removing by-products produced in dry-etch

1996-03-04

1997-10-07

Niebling, John

Fishing, trapping, and vermin destroying

437200, 437247, 1566461, 1566531, H01L 2128

Patent

active

056747829

ABSTRACT:
A method for efficiently removing by-products produced in dry-etching a fabricated structure of a semiconductor device, particularly, a polycide structure. The method includes the steps of sequentially forming a polysilicon layer and a refractory metal silicide layer to overlie previously fabricated structures on a semiconductor substrate, dry-etching the polysilicon layer and the refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, and thermal treating the resultant structure to remove at least one kind of by-product produced in the dry-etching step at a temperature higher than the boiling point of any by-product.

REFERENCES:
patent: 4478678 (1984-10-01), Watanabe
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5110411 (1992-05-01), Long
patent: 5200028 (1993-04-01), Tatsumi
patent: 5378653 (1995-01-01), Yanagida
patent: 5391244 (1995-02-01), Kadomura

Affiliated with

Also associated with

Rating

Method for efficiently removing by-products produced in dry-etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for efficiently removing by-products produced in dry-etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for efficiently removing by-products produced in dry-etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2356979