Method for dual-layer polyimide processing on bumping...

Details Method for dual-layer polyimide processing on bumping... Method for dual-layer polyimide processing on bumping...

2005-10-25

2005-10-25

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S779000, C257S780000, C257S781000

Reexamination Certificate

active

06958546

ABSTRACT:
A new method and processing sequence is provided for the formation of solder bumps that are in contact with underlying aluminum contact pads. A patterned layer of negative photoresist is interposed between a patterned layer of PE Si3N4and a patterned layer of polyamide insulator. The patterned negative photoresist partially overlays the aluminum contact pad and prevents contact between the layer of polyamide insulator and the aluminum contact pad. By forming this barrier no moisture that is contained in the polyamide insulator can come in contact with the aluminum contact pad, therefore no corrosion in the surface of the aluminum contact pad can occur.

REFERENCES:
patent: 5492235 (1996-02-01), Crafts et al.
patent: 5834844 (1998-11-01), Akagawa et al.
patent: 5903058 (1999-05-01), Akram
patent: 5946590 (1999-08-01), Satoh
patent: 6028011 (2000-02-01), Takase et al.
patent: 6046101 (2000-04-01), Dass et al.

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