Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2007-10-30
2007-10-30
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S005000, C430S311000, C430S396000
Reexamination Certificate
active
10693202
ABSTRACT:
A reticle structure and a method of forming a photoresist profile on a substrate using the reticle having a multi-level profile. The reticle comprises (1) a transparent substrate, (2) a partially transmitting 180 degree phase shift film overlying predetermined areas of the transparent substrate to transmit approximately 20 to 70% of incident light, and (3) an opaque film overlying the predetermined areas of the partially transmitting 180 degree phase shift film. The method comprises the following steps: a) depositing a photoresist film over the substrate; b) directing light to the photoresist film through the reticle, and c) developing the photoresist film to form an opening in the resist layer where light only passed thru the substrate, and to remove intermediate thickness of the photoresist film, in the areas where the light passed through the partially transmitting 180 degree phase shift film. In an aspect, the photoresist film is comprised of a lower photoresist layer and an upper photoresist layer. The lower photoresist layer is less sensitive to light than the upper photoresist layer. In an aspect, the resist profile is used to form a dual damascene shaped opening.
REFERENCES:
patent: 5753417 (1998-05-01), Ulrich
patent: 5906910 (1999-05-01), Nguyen et al.
patent: 5936707 (1999-08-01), Nguyen et al.
patent: 6242344 (2001-06-01), Koh et al.
patent: 6355399 (2002-03-01), Sajan et al.
patent: 6482554 (2002-11-01), Matsunuma
patent: 7014962 (2006-03-01), Lin et al.
Chong Huey Ming
Lin Qun Ying
Tan Sia Kim
Tan Soon Yoeng
Chacko-Davis Daborah
Chartered Semiconductor Manufacturing Ltd.
Huff Mark F.
Stoffel William J.
LandOfFree
Method for dual damascene patterning with single exposure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for dual damascene patterning with single exposure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for dual damascene patterning with single exposure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3869244