Method for drying a wafer and apparatus for performing the same

Drying and gas or vapor contact with solids – Process – Gas or vapor pressure varies during treatment

Reexamination Certificate

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Details

C034S404000, C034S410000, C034S263000, C034S264000, C034S406000, C034S092000

Reexamination Certificate

active

06889447

ABSTRACT:
An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

REFERENCES:
patent: 5174042 (1992-12-01), Tomizawa et al.
patent: 5655313 (1997-08-01), Hope et al.
patent: 5820692 (1998-10-01), Baecker et al.
patent: 5855077 (1999-01-01), Nam et al.
patent: 6286524 (2001-09-01), Okuchi et al.
patent: 6357142 (2002-03-01), Bergman et al.
patent: 6537927 (2003-03-01), Son
patent: 0423377 (1991-04-01), None
patent: (10) 2002-1386 (2002-01-01), None

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