Method for dry etching of a semiconductor substrate

Details Method for dry etching of a semiconductor substrate Method for dry etching of a semiconductor substrate

1995-10-04

1998-01-06

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566461, 1566591, 1566621, 437228, G02B 300, H01L 2100

Patent

active

057050252

ABSTRACT:
A method for dry etching of a semiconductor substrate includes producing convex structures on a surface of a semiconductor wafer by using a suitable masking and a suitable etchant. A thick photoresist layer is applied to a semiconductor wafer and structured. The structured photoresist layer is liquified by the influence of temperature to produce a spherical structure and is then hardened as an etchable masking. The semiconductor wafer structured with the photoresist layer is etched in plasma at etching speeds being similar for the semiconductor material and the photoresist, for transferring a convex structure of the photoresist layer to the semiconductor wafer, during etching down of the photoresist layer.

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