Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1996-04-10
1998-07-21
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566561, 15665911, 216 67, 216 75, 437190, 437245, 252 791, H01L 2100, C23F 100
Patent
active
057830363
ABSTRACT:
A method is for dry etching metal films having a high melting point, such as tungsten (W) films. A SiO.sub.2 film is grown on a silicon substrate after which a W film is deposited using sputtering technology. Then, a photoresist film is deposited and is patterned by optical lithography. A semiconductor substrate thus formed is placed in a dry etching system of a narrow gap type with an anode coupled configuration and is etched using a gas mixture composed of SF.sub.6, Cl.sub.2 and O.sub.2 under conditions such that the flow rate ratio of the gases SF.sub.6 /Cl.sub.2 /O.sub.2 are 20.0:0.5.about.1.5:3.about.7. With this, it is possible to achieve excellent selective etching of the W film with respect to the SiO.sub.2 film that is used as an underlying film.
REFERENCES:
patent: 5160408 (1992-11-01), Long
NEC Corporation
Powell William
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