Method for dry-etching aluminum and aluminum alloys

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156656, 1566591, 156665, 204192E, 252 791, 134 29, 134 30, C23F 100, C23F 102

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active

042670136

ABSTRACT:
A method for dry-etching Al and Al alloys is disclosed, which comprises producing plasma discharges with a mixed gas comprising boron trichloride and freon and/or oxygen incorporated therein and patterning Al or an Al alloy by the produced discharges. In this dry etching method, the etch rate of Al or an Al alloy can be remarkably improved over the etch rate attainable according to the conventional techniques, and the difference of the etch rate between Al or an Al alloy and other material can be remarkably increased.

REFERENCES:
patent: 3951709 (1976-04-01), Jacob
patent: 4030967 (1977-06-01), Ingrey et al.
Kodac Microelectronics Seminar Proceedings Interface 77, Plasma Etching of Aluminum by Herndon et al., pp. 33-41.
J. Vac. Sci. Technol., vol. 15, No. 2, Mar./Apr. 1978, Reactive Ion Etching of Aluminum and Aluminum Alloys in an Rf Plasma Containing Halogen Species by Schaible et al., pp. 334-337.

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