Method for dry etching

Details Method for dry etching Method for dry etching

1991-10-11

1993-05-18

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156662, 156656, 156657, H01L 2100

Patent

active

052118045

ABSTRACT:
A method for dry etching is disclosed which incorporates the steps of preparing a substrate having a metal film thereon in which aluminium is contained therein; generating a plasma by interacting a mixture gas consisting of a chloride gas, an oxygen gas and a nitrogen gas or a mixture of a chloride gas, a chlorine gas, an oxygen gas and a nitrogen gas with a microwave in a magnetic field, and etching the metal film in the plasma, whereby the metal film which contains aluminum can be etched without undercutting it and forming residues.

REFERENCES:
patent: 4256534 (1981-03-01), Levinstein et al.
patent: 4267013 (1981-05-01), Iida et al.
patent: 4444618 (1984-04-01), Laia et al.
patent: 4468284 (1984-08-01), Nelson
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4838992 (1989-06-01), Abraham
"Silicon Processing for the VLSI Era-vol. 1"; Wolf et al.; .COPYRGT.1986; Sunset Beach, Calif.; pp. 562, 581-582.
Plasma Etching of Aluminum, Dennis W. Hess, Solid State Technology/Apr. 1981 pp. 189-194.
1990 Dry Process Symposium-After Corrosion Suppression Using Low-Temperature Al-Si-Cu Etchings, pp. 141-146.

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