Method for dry-etching

Details Method for dry-etching Method for dry-etching

1981-05-05

1983-10-25

Paschall, M. H.

Electric heating

Metal heating

By arc

156643, 156646, 204192E, 219121PE, H01L 21306

Patent

active

044121199

ABSTRACT:
A dry-etching method for working SiO.sub.2, phospho-silicate glass, Si, Mo, W, Cr, TiW, Si.sub.3 N.sub.4 or the like by the use of a glow discharge plasma involves the steps of introducing He, Ar, N.sub.2, O.sub.2 or a mixed gas thereof into a reaction chamber from the outside; and effecting the plasma discharge in the reaction chamber so that a reactive gas is liberated from a high molecular resin material arranged in the reaction chamber and containing fluorine atoms. The dry-etching method requires and uses no expensive gas containing a fluorocarbon, but has sufficient etching rate and selectivity.

REFERENCES:
patent: 4243476 (1981-01-01), Ahn et al.
Coburn, "Increasing the Etch . . . Etching", IBM Disclosure, vol. 19, No. 10, 3-1977, p. 3854.
Desilets et al. "Reactive Species . . . Compound", IBM Disclosure, vol. 22, No. 1, 6-1976, 9186, p. 112.

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