Method for DRAM sensing current control

Details Method for DRAM sensing current control Method for DRAM sensing current control

1995-01-25

1996-11-12

Dinh, Son

Static information storage and retrieval

Systems using particular element

Capacitors

365205, 365208, G11C 700

Patent

active

055746810

ABSTRACT:
A DRAM having a plurality of bit lines and associated sense amplifiers, the bit lines being arrayed across an integrated circuit chip and the sense amplifiers being disposed in a row, a pair of low resistance power supply conductors extending in parallel with the row for carrying logic high level and logic low level voltages, sense amplifier enabling signal conductors extending across the chip accessible to the sense amplifiers, apparatus for coupling sense inputs of the sense amplifiers to the power supply conductors, and apparatus coupling the sense amplifier enabling signal conductors to the apparatus for coupling sense inputs, for enabling passage of current resulting from the logic high level and low level voltages to the sense amplifiers.

REFERENCES:
patent: 4780850 (1988-10-01), Miyamoto et al.
patent: 4941128 (1990-07-01), Wada et al.
patent: 4943960 (1990-07-01), Komatsu et al.
patent: 5020031 (1991-05-01), Miyatake
patent: 5414662 (1995-05-01), Foss et al.

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