Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-08
2008-04-08
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S458000, C257SE21614
Reexamination Certificate
active
07354809
ABSTRACT:
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
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Eriksson Mark A.
Evans Paul G.
Lagally Max G.
Ma Zhenqiang
Wang Guogong
Foley & Lardner LLP
Smoot Stephen W.
Wisconsin Alumi Research Foundation
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