Method for doping semiconductor layer, method for producing...

Details Method for doping semiconductor layer, method for producing... Method for doping semiconductor layer, method for producing...

2006-01-10

2006-01-10

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C257S066000, C257S072000

Reexamination Certificate

active

06984552

ABSTRACT:
A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.

REFERENCES:
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patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6444507 (2002-09-01), Miyasaka
patent: 57-202729 (1982-12-01), None
patent: 64-11323 (1989-01-01), None
patent: 03-218622 (1991-09-01), None
patent: 04-48723 (1992-02-01), None
patent: 07-135170 (1995-05-01), None

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