Method for doping a semiconductor body

Details Method for doping a semiconductor body Method for doping a semiconductor body

2006-08-15

2006-08-15

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S528000

Reexamination Certificate

active

07091115

ABSTRACT:
The invention relates to a method for doping a semiconductor body (2), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam (8) in specific regions (9) so that the original p-type doping is present in said regions (9).

REFERENCES:
patent: 4522657 (1985-06-01), Rohatgi et al.
patent: 10018371 (2001-10-01), None
patent: 10025567 (2001-12-01), None

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