Method for doping a melt

Details Method for doping a melt Method for doping a melt

1988-06-02

1990-05-22

Andrews, Melvyn J.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 156DIG84, 156DIG94, 437115, H01L 21208

Patent

active

049274899

ABSTRACT:
A method for doping a silicon melt for growing silicon dendritic web crystals is disclosed. The melt is doped with antimony prior to commencing web growth, which allows the crystals to be grown without the need for replenishing the dopant, and producing crystals having uniform resistivities. Photovoltaic cells produced from crystals grown from the antimony doped melt exhibit superior properties relative to those doped according to other methods.

REFERENCES:
patent: 3093520 (1963-06-01), John et al.
patent: 4428783 (1984-01-01), Gessert
Seidensticker, "Densritic Web Growth of Silicon", 8 Crystals 145 (1982), pp. 145-235.
Seidensticker et al., "Silicon Ribbon Growth by the Dendritic Web Process", Journal of Crystal Growth 50, pp. 221-235, 1979.

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