Method for directional solidification of silicon

Details Method for directional solidification of silicon Method for directional solidification of silicon

1978-05-02

1981-01-06

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG83, C30B 1102

Patent

active

042434718

ABSTRACT:
A method for growing silicon crystalline material by the directional solidification method without cracking the growth container. The container material must have an average thermal expansion coefficient of between about 3.0 to 4.3.times.10.sup.-6 .degree.C..sup.-1 between about 20.degree. and 650.degree. C. The molten silicon is provided in the container and solidified sequentially from the enclosed regions to the open region of the container to form the crack-free silicon crystalline material.

REFERENCES:
Solid-State Electronics, Pergaman Press, vol. 6, pp. 251-254, Lewis et al., 1963.

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