Method for direct bonding of metallic conductors to a...

Details Method for direct bonding of metallic conductors to a... Method for direct bonding of metallic conductors to a...

2007-10-10

2009-10-06

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000

Reexamination Certificate

active

07598164

ABSTRACT:
A method to provide direct bonding of wires to silicon for microelectronic and micro-electromechanical systems (MEMS). The method includes preparing a rough “pothole” during one of the many deep etch steps already provided in MEMS fabrication. The method also includes roughening of the smooth silicon surface in and around the rough pothole and plastically deforming a ball-bond into the rough pothole, such that the interconnection will eliminate a costly metallization layer, and thereby lower fabrication expenses and allow high temperature processing.

REFERENCES:
patent: 6507112 (2003-01-01), Kurihara et al.
patent: 7009305 (2006-03-01), Carberry
patent: 7202565 (2007-04-01), Matsuura et al.
patent: 7220663 (2007-05-01), Chopra et al.

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