Method for differential selective deposition of metal for fabric

Details Method for differential selective deposition of metal for fabric Method for differential selective deposition of metal for fabric

1985-09-27

1986-10-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29591, 134 1, 156646, 156656, 156664, 156345, 20419235, 204298, 427 88, 427 89, 427 91, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

046170871

ABSTRACT:
A deposition technique for forming metal regions on semiconductor substrates, and more particularly to a fabrication method for the differential selective deposition of tungsten for forming tungsten contacts on an integrated circuit chip.
Tungsten hexafluoride gas (WF6) is introduced into a deposition chamber containing a silicon substrate with an apertured silicon dioxide mask layer thereon. The exposed Si surfaces on which the selective deposition is to be performed, are first converted to W surfaces by the substitution reaction:

REFERENCES:
patent: 3785862 (1974-01-01), Grill
patent: 4349408 (1982-09-01), Tang et al.

Affiliated with

Also associated with

Rating

Method for differential selective deposition of metal for fabric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for differential selective deposition of metal for fabric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for differential selective deposition of metal for fabric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1338988