Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2005-05-11
2011-10-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S018000, C438S663000, C257S048000, C257SE21324, C257SE21497, C257SE21521, C257SE21522
Reexamination Certificate
active
08030099
ABSTRACT:
The present disclosure is related to a method for determining time to failure characteristics of a microelectronics device. A test structure, being a parallel connection of a plurality of such on-chip interconnects, is provided. Measurements are performed on the test structure under test conditions for current density and temperature. The test structure is arranged such that failure of one of the on-chip interconnects within the parallel connection changes the test conditions for at least one of the other individual on-chip interconnects of the parallel connection. From these measurements, time to failure characteristics are determined, whereby the change in the test conditions is compensated for.
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IMEC
Kim Su
McDonnell Boehnen & Hulbert & Berghoff LLP
Smith Matthew
Universiteit Hasselt
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