Method for determining the depth of a buried structure

Optics: measuring and testing – By light interference – For dimensional measurement

Reexamination Certificate

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Reexamination Certificate

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10835259

ABSTRACT:
The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.

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patent: 2003-243467 (2003-08-01), None
patent: 2003243467 (2003-08-01), None

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