Optics: measuring and testing – By light interference – For dimensional measurement
Reexamination Certificate
2007-12-11
2007-12-11
Lyons, Michael A. (Department: 2877)
Optics: measuring and testing
By light interference
For dimensional measurement
Reexamination Certificate
active
10835259
ABSTRACT:
The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and/or ellipsometric methods.
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Hecht Thomas
Jakschik Stefan
Mantz Ulrich
Orth Andreas
Schröder Uwe
Infineon - Technologies AG
Lyons Michael A.
Patterson & Sheridan L.L.P.
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