Method for determining the critical path of an integrated...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000, C703S016000, C703S019000, C702S179000, C702S125000, C702S181000, C702S118000, C702S189000, C714S033000, C714S700000, C714S741000, C324S532000, C324S535000, C324S617000, C324S076540, C324S076740

Reexamination Certificate

active

07096443

ABSTRACT:
A method of determining the critical path of a circuit includes first determining the paths, their mean path transit times and their path transit time fluctuations. Paths having similar statistical parameters are combined to form one path group. For each path group, a statistical group figure is, then, calculated and, for the totality of paths considered, a statistical total figure is calculated. Finally, the critical paths of the circuit are determined by taking into consideration the total figure, comparing the group figures at or above a critical path transit time Tc.

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Bowman, K. A. et al.: “Impact of Extrinsic and Intrinsic Parameter Fluctuations on CMOS Circuit Performance”, IEEE Journal of Solid-State Circuits, vol. 35, No. 8, Aug. 2000, pp. 1186-1193.
Eisele, M. et al.: “The Impact of Intra-Die Device Parameter Variations on Path Delays and on the Design for Yield of Low Voltage Digital Circuits”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 5, No. 4, Dec. 1997, pp. 360-368.

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