Method for determining the complete elimination of a thin layer

Details Method for determining the complete elimination of a thin layer Method for determining the complete elimination of a thin layer

1991-07-19

1993-02-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 20419233, H01L 21306

Patent

active

051867869

ABSTRACT:
A method for determining the complete elimination of a thin layer (3) deposited on a substrate (1) includes the steps of providing on an area of the substrate (1) an optical diffraction grating (2, 2'), the thin layer deposited on the substrate also covering this diffraction grating, and the etching of the thin layer being also carried out in the area of the diffraction grating; illuminating the grating (2, 2') with a monochromatic light beam; and observing the evolution of the diffracted light during the etching of the thin layer, in order to determine the moment when the material of the thin layer is entirely removed.

REFERENCES:
patent: 4141780 (1979-02-01), Kleinknecht et al.
patent: 4680084 (1987-07-01), Heimann et al.
patent: 4927785 (1990-05-01), Theeten et al.
Thin Solid Films, "Optical Monitoring of the End Point in Thin Film Plasma Etching", 109, 1983, pp. 363-369.
SPIE vol. 990, Chemical, Biochemical and Environmental Applications of Fibers (1988), "Non-Destructive Testing of Reflow on SI Wafer", Laloux, et al., pp. 158-162.

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