Optics: measuring and testing – By polarized light examination – Of surface reflection
Reexamination Certificate
2006-08-29
2006-08-29
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By polarized light examination
Of surface reflection
C356S445000
Reexamination Certificate
active
07099007
ABSTRACT:
A method is disclosed for measuring the dose and energy level of ion implants forming a shallow junction in a semiconductor sample. In the method, two independent measurements of the sample are made. The first measurement monitors the response of the sample to periodic excitation. In the illustrated embodiment, the modulated optical reflectivity of a reflected probe beam is monitored to provide information related to the generation of thermal and/or plasma waves in the sample. A second spectroscopic measurement is also performed. This measurement could be either a spectroscopic reflectometry measurement or a spectroscopic ellipsometry measurement. The data from the two measurements are combined in a manner to yield information about both the dose (concentration) of the dopants as well as the energy used to inject the dopants in the semiconductor lattice. The method will useful in controlling the formation of shallow junctions.
REFERENCES:
patent: 4522510 (1985-06-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5181080 (1993-01-01), Fanton et al.
patent: 5185273 (1993-02-01), Jasper
patent: 5298970 (1994-03-01), Takamatsu et al.
patent: 5861632 (1999-01-01), Rohner
patent: 5973787 (1999-10-01), Aspnes et al.
patent: 5978074 (1999-11-01), Opsal et al.
patent: 6052188 (2000-04-01), Fluckiger et al.
patent: 6081330 (2000-06-01), Nelson et al.
patent: 6268916 (2001-07-01), Lee et al.
patent: 6512815 (2003-01-01), Opsal et al.
patent: 6535285 (2003-03-01), Opsal et al.
patent: WO 99/02970 (1999-01-01), None
patent: WO 00/68656 (2000-11-01), None
L. Zhou et al., “Use of a New Thermal Wave Technology for Ultra-Shallow Junction Implant Monitoring,”Proceedings of the X International Conference on Ion Implantation Technology, Jun. 1998, Kyoto (Japan), pp. 1-4.
A. Salnick et al., “Quantitative Photothermal Characterization of Ion-Implanted Layers in Si,”25th Review of Progress in QNDE, Snowbird (Utah), Jul. 19-24, 1998, pp. 1-15.
Hovinen Minna
Opsal Jon
Punnoose Roy M.
Stallman & Pollock LLP
Therma-Wave, Inc.
Toatley , Jr. Gregory J.
LandOfFree
Method for determining ion concentration and energy of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for determining ion concentration and energy of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for determining ion concentration and energy of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3685246