Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-08-08
2006-08-08
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192130, C204S192150, C204S298030, C204S298120, C204S298130
Reexamination Certificate
active
07087142
ABSTRACT:
The present invention relates to a method for determining a critical size for a diameter of an Al2O3inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
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Leybovich Alexander
Poole John E.
Wickersham, Jr. Charles E.
Zhu Lin
McDonald Rodney G.
Tosoh SMD, Inc.
Wegman Hessler & Vanderburg
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