Method for determination of elastic strains present in...

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

Reexamination Certificate

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C378S071000

Reexamination Certificate

active

07116753

ABSTRACT:
Action on the tested wafer1is rendered with X-ray beam3converging in a point located inside the wafer or under it. Determination of relative position of the interference maxima is performed for diffraction reflections from crystallographic planes having the form of {nKK}, where n is equal to H, K or L and differs for distinct crystallographic planes.Means11for beam shaping creates beam3simultaneously acting on multiple crystallographic planes. Detectors13receive diffracted radiation in the whole angular range containing the interference maxima corresponding to the reflections from the irradiated planes.

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Cargill III, G.S., “Novel applications of X-ray analysis to microelectronic materials and devices”, Solid-State Electronics, Aug. 2002, vol. 46, Issue 8, pp. 1139-1143.
Kawano, et al., “Highly sensitive and tunable detection of far-infrared radiation by quantum Hall devices,” Journal of Applied Physics, Apr. 1, 2001, pp. 4037-4048, vol. 89, No. 7, American Institute of Physics, US.
Brümmer, V. O., “About the simultaneous generation of the roentgen-interference and of the roentgen-silhouette of crystals,” Zeitschrift für Naturforschung, 15a, Jun. 12, 1960, pp. 875-879, Halle University, Institute of Experimental Physics, Germany.

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