Method for detecting time for termination of surface layer remov

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156643, 156646, 156653, 156657, 1566591, 156345, 20419237, 204298, H01L 21306, B44C 122, C03C 1500, C03C 2506

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active

047674954

ABSTRACT:
A silicon oxide layer is provided on the surface of a semiconductor substrate. Light is applied to the silicon oxide layer while the silicon oxide layer is removed by etching. Intensity of reflected light is detected to obtain an intensity detection signal. The time that would be required for a decrease in thickness of the silicon oxide layer through etching by half of the wavelength of the light is previously obtained to define a reference time period. Within the intensity detection signal, a component periodically changed with a cycle time period equal to the reference time period is extracted. On the basis of the time change of the value of the component, a termination time of silicon oxide layer removal processing is detected.

REFERENCES:
patent: 4454001 (1984-06-01), Sternheim
patent: 4496425 (1985-01-01), Kuyel
patent: 4569717 (1986-02-01), Ohgami et al.
patent: 4660979 (1987-04-01), Muething

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