Method for detecting implantation mask misalignment

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

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438 14, 438162, 438517, H01L 2177

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active

057417326

ABSTRACT:
A test apparatus for determining alignment of an implantation mask in the construction of thin film transistors (TFTs), a method for determining the alignment of an implantation mask employed in the construction of TFTs, and a method for constructing TFTs, employing a test implantation mask for the construction of an implantation region for multiple adjacent TFTs, are provided in which the test implantation mask has a sloped or stepped profile such that the masked area increases as the test implantation mask extends from one TFT to another TFT.

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patent: 5334541 (1994-08-01), Adams et al.
patent: 5369050 (1994-11-01), Kawai

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