Method for detecting etching endpoint, and etching apparatus and

Details Method for detecting etching endpoint, and etching apparatus and Method for detecting etching endpoint, and etching apparatus and

1996-10-07

1999-03-23

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

438 9, 438 14, G01L 2130, H01L 2100

Patent

active

058854720

ABSTRACT:
A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.

REFERENCES:
patent: 4936967 (1990-06-01), Ikuhara et al.
patent: 5118378 (1992-06-01), Moroi et al.
patent: 5236556 (1993-08-01), Yokota et al.
patent: 5290383 (1994-03-01), Koshimizu
patent: 5626714 (1997-05-01), Miyazaki et al.

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