Method for detecting crystal defects in semiconductor silicon an

Details Method for detecting crystal defects in semiconductor silicon an Method for detecting crystal defects in semiconductor silicon an

1977-12-20

1981-01-06

Garris, Bradley R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

23230R, 156651, 156662, 356 30, C30B 3300, H01L 2130, H01L 21306

Patent

active

042434734

ABSTRACT:
Method for detecting crystal defects in semiconductor silicon which comprises treating a preliminarily mirror etched crystal of semiconductor silicon with a detecting solution which is a mixture of about 50% hydrofluoric acid solution and concentrated nitric acid in a ratio of 1000 to 0.1-20 by volume added with an anionic surfactant, and thereafter applying renewedly a mirror etching thereto. Also provided is a detecting solution therefor. Practice of the method causes no occupational disease and no environmental pollution with respect to hexavalent chromium.

REFERENCES:
patent: 2653085 (1953-09-01), Wynne
patent: 2740700 (1956-04-01), Fuller
patent: 2973253 (1961-02-01), Stead
patent: 3108919 (1963-10-01), Bowman et al.
patent: 3143447 (1964-08-01), Norr
patent: 3490873 (1970-01-01), Cori

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