Method for detecting CMP endpoint in acidic slurries

Details Method for detecting CMP endpoint in acidic slurries Method for detecting CMP endpoint in acidic slurries

2005-04-12

2005-04-12

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

Reexamination Certificate

active

06878629

ABSTRACT:
An apparatus for measuring ammonia gas concentration in an ongoing mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components:a. A transferring means to collect a sample of the acidic CMP slurry;b. A converting means to convert the acidic CMP slurry to a basic slurry;c. A measuring means to measure the ammonia gas present in the basic slurry;d. A detection means to signal the end of an ongoing CMP cycle.

REFERENCES:
patent: 6021679 (2000-02-01), Li et al.
patent: 6180422 (2001-01-01), Li et al.
patent: 6254453 (2001-07-01), Li et al.
patent: 6324298 (2001-11-01), O'Dell et al.
patent: 6334880 (2002-01-01), Negrych et al.
patent: 6709311 (2004-03-01), Cerni

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