Method for detecting an end point of etching in semiconductor ma

Details Method for detecting an end point of etching in semiconductor ma Method for detecting an end point of etching in semiconductor ma

1992-09-24

1993-11-16

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156627, 437 8, H01L 2100, H01L 2102, H01L 21302, H01L 21306

Patent

active

052619982

ABSTRACT:
For dry-etching a material such as an aluminum alloy layer, a helium gas is added to an etching gas to detect an end point of etching in the material. When the dry-etching of the material has been completed, an emission spectrum intensity of helium having a single peak occurs.

REFERENCES:
patent: 4713141 (1987-12-01), Tsang
patent: 4948462 (1990-08-01), Rossen
patent: 5180464 (1993-01-01), Tatsumi et al.
patent: 5198072 (1993-03-01), Gabriel
Marcoux, P. Optical methods for end point detection in plasma etching, Proc. Soc. Photo-Opt. Instrum. Eng., 276, 1981, pp. 170-177.
Poulsen, R., Use of optical emission spectra for end point detection in plasma etching, Proc.-Electrochem. Soc., 77-2, 1977, pp. 1058-1070.

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