Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1988-05-27
1991-01-29
Powell, William A.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 541, 427294, B05D 306, B05D 300
Patent
active
049885332
ABSTRACT:
A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
REFERENCES:
patent: 3439238 (1969-04-01), Williams et al.
patent: 3765763 (1973-10-01), Nygaard
patent: 4250428 (1981-02-01), Oliver et al.
patent: 4293249 (1981-10-01), Whelan
patent: 4306292 (1981-12-01), Head
patent: 4393095 (1983-07-01), Greenberg
patent: 4439243 (1984-03-01), Titus
patent: 4439244 (1984-03-01), Allevato
patent: 4447469 (1984-05-01), Peters
patent: 4465898 (1984-08-01), Orcutt et al.
patent: 4493977 (1985-09-01), Arai et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4584207 (1986-04-01), Wilson
patent: 4609103 (1986-09-01), Bimer
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4629635 (1986-12-01), Brors
patent: 4632057 (1986-12-01), Price et al.
patent: 4673456 (1987-06-01), Spencer et al.
patent: 4684542 (1987-08-01), Jasinski et al.
Lucovsky et al., "Deposition of Dielectric Films by Remote Plasma Enhanced CVD", Mat. Res. Soc. Symp. Proc., vol. 68, 1986, pp. 323-334.
Sakai et al., "Sealing Concept of Elastic Metal Gasket `Helicoflex`", 32 Vacuum 33 (1982).
Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", 26 IEEE Transactions on Nuclear Science 4000 (1979).
Fleming et al., "Development of Bakable Seal for Large Non-Circular Ports on the Tokamak Fusion Test Reactor", 17 Journal of Vacuum Science and Technology, 337 (1980).
Accomazzo et al., "Ultrahigh Efficiency Membrane Filters for Semi-Conductor Process Gases", Solid State Technology 27(3), pp. 141-146 (1984).
Kasper et al., "Gas Filtration System for 10.sup.5 Particles/cm.sup.3 ", Aerosol Science and Technology, 5(2), pp. 167-185 (1986).
M. L. Malczewski, J. D. Borkman, and G. T. Vardian, "Measurement of Particulates in Filtered Process Gas Streams", Solid State Technology 29(4), pp. 151-157 (1986).
C. M. Van Atta, "Vacuum Science and Engineering", McGraw-Hill, New York, pp. 31.
R. A. Bowling, "An Analysis of Adhesion on Semiconductor Surfaces", Journal of the Electrochemical Society 132(9), pp. 2208-2214 (1985).
"Grooves Reduce Aircraft Drag", NASA Tech Briefs 5 (2), p. 192.
*"Mission Accomplished", NASA Tech Briefs 117 (3), pp. 82-83 (1987).
*C. J. Howard, J. Phys. Chem., vol. 83, pp. 6 (1979).
H. Schlichting, "Boundary-Layer Theory," 7th Edition, McGraw Hill, New York, (1979).
S. V. Nguyen, "Plasma Assisted Chemical Vapor Deposited Thin Films for Microelectronic Applications", J. Vac. Sci. Technol. B4(5), Sep./Oct. 1986, pp. 1159-1167.
S. Nishino, et al., "SiO.sub.2 Deposition by Photo-Initiation", Extended Abtracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 209-212.
C. J. Mogab, "Plasma Etching of Si and SiO.sub.2 --The Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., vol. 49, No. 7, Jul. 1978, pp. 3796-3803.
D. L. Flamm, et al., "Reaction of Fluorine Atoms with SiO.sub.2 ", J. Appl. Phys 50 (10), Oct. 1979, pp. 6211-6213.
D. L. Flamm, et al., "The Reaction of Fluorine Atoms with Silicon", J. Appl. Phys. 52 (6), 1981, pp. 3633-3639.
G. Smolinski et al., "The Plasma Oxidation of CF.sub.4 in a Tubular-Alumina Fast-Flow Reactor", J. Appl. Phys. 50 (7), Jul. 1979, pp. 4982-4987.
J. F. Gibbons, et al., "Limited Reaction Processing: Silicon Epitaxy", Appl. Phys. Lett. 47 (7), 1 Oct. 1985, pp. 721-723.
A. Yamada, et al., "Photochemical Vapor Deposition of Single-Crystal Silicon at a Very Low temperature of 200.degree. C.", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 217-220.
K. Tsujimoto, et al., "A New Sidewall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Robert R. Krchnavek, et al., "Photo Deposition Rates of Metal from Metal Alkyls", J. Vac. Sci. Tecnol. B 5 (1), Jan./Feb. 1987, pp. 20-26.
Hiroyuki Yokoyama, "Photo Induced Surface Morphology Improvement and Preferential Orientation Enhancement in Film Deposition of Evaporated ZnS", Appl. Phys. Lett. 49 (20), 17 Nov. 1986, pp. 1354-1356.
J. B. Mullin, et al., "Ultraviolet Assisted Growth of II-VI Compounds", J. Vac. Sci. Technol. A, vol. 4, No. 3, May/Jun. 1986, pp. 700-703.
S. Oda et al., "Hydrogen Radical Assisted Chemical Vapor Deposition of ZnSe", Appl. Phys. Lett. 49 (1), 6 Jan. 1986, pp. 33-35.
R. A. Levy et al., "Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications", J. Electrochem. Soc.: Reviews and News, Feb. 1987, pp. 37C-49C.
Carl E. Larson, et al., "Chemical Vapor Deposition of Gold", Aug. 11, 1986, IBM Almaden Research Center, San Jose, CA 91520, p. 266.
Paul A. Robertson, et al., "Photo Enhanced Deposition of Silicon Oxide Thim Films Using an Internal Nitrogen Discharge Lamp", Fall 1986, Materials Research Society Symposium, Dec. 1986.
J. Praraszczak, et al., "Methods of Creation and Effect of Microwave Plasmas Upon the Etching of Polymers and Silicon", Microelectronic Engineering 3 (1985), pp. 397-410.
C. Arnone, et al., Study of Photo-Induced Thin Film Growth on CdS Substrates, Mat. Res. Soc. Symp. Proc. vol. 29, (1984), pp. 275-281.
Helicolfex Company, Catalog H. 001. 002, Resilient Metal Seals and Gaskets.
P. D. Richard, et al., "Remote Plasma Enhanced CVD Deposition of Silicon Nitride and Oxide for Gate Insulators in (In, Ga) As FET Devices", J. Vac. Sci. Technol. A3 (3), May/Jun. 1985,. pp. 867-872.
G. Lucovsky et al., "Deposition of Silicon Dioxide and Silicon Nitride by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol., A4 (3), May/Jun. 1986, pp. 681-688.
D. E. Tsu, et al., "Silicon Nitride and Silicon Diimide Grown by Remote Plasma Enhanced Chemical Vapor Deposition", J. Vac. Sci. Technol. A4 (3), May/Jun. 1986, pp. 480-485.
Advertisement, "Dry Stripper", Samco/Mar., Solid State Technology, 30(3) Mar. 1987, p. 45.
F. Paneth et al., "Paneth's Lead-Mirror Experiment", Ber. Dt. Chem. Ges. B62 1335 (1929).
Hajime Ishimaru et al., "Bakable Aluminum Vacuum Chamber and Bellows with an Aluminum Flange and Metal Seal for Ultrahigh Vacuum", J. Vac. Sci. Technol., 15(6) Nov./Dec. 1978, pp. 1853-1854.
S. Mehta, et al., "Blanket CVD Tungsten Interconnect for VLSI Device", Jun. 9-10, 1986, V-MIC Conf., pp. 418-435.
M. E. Burba, et al., "Selective Dry Etching of Tungsten for VLSI Metallization", J. Electrochem. Soc.: Solid State Science and Technology, Oct. 1986, pp. 2113-2118.
S. Iwata et al., "A New Tungsten Gate Process for VLSI Applications", IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep. 1984, pp. 1174-1179.
C-K. Hu et al., "Reactive Ion Etching of CVD and Sputtered Tungsten Films", IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598, two pages.
IBM, "Anisotropic and Selective Etching of Tungsten Silicide-Tunstent-Tungsten-Silicide Composite Stack", IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, p. 1151.
Japanese Laid-Open No. 61-114531, Jun. 2, 1986, Plasma Treatment by Microwave.
Japanese Laid-Open No. 61-150,219, Jul. 8, 1986, Microwave Plasma Treating Apparatus.
Japanese Laid-Open No. 61-113,778, May 31, 1986, Surface Treating Device.
Davis Cecil J.
Freeman Dean W.
Luttmer Joseph D.
Smith Patricia B.
Comfort James T.
Powell William A.
Rogers Joseph E.
Sharp Melvin
Texas Instruments Incorporated
LandOfFree
Method for deposition of silicon oxide on a wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for deposition of silicon oxide on a wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for deposition of silicon oxide on a wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-812457