Method for deposition of diamond-like carbon and silicon-doped d

Details Method for deposition of diamond-like carbon and silicon-doped d Method for deposition of diamond-like carbon and silicon-doped d

1999-02-03

2000-07-11

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272497, 427523, 427902, 427904, 427571, H05H 124, C23C 1626

Patent

active

060869623

ABSTRACT:
A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 .ANG. per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively. The method is particularly advantageous for producing thin, hard, wear resistant DLC and Si-DLC coatings for magnetic transducers and media used for magnetic data storage applications.

REFERENCES:
patent: 5455081 (1995-10-01), Okada et al.
patent: 5616179 (1997-04-01), Baldwin et al.

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