Method for depositing uniform tungsten layers by CVD

Coating processes – Coating by vapor – gas – or smoke – Metal coating

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427253, 427255392, 427255394, 427 99, 427124, 4271261, 438648, 438656, 438685, C23C 1608, H01L 21285

Patent

active

060663669

ABSTRACT:
Within wafer and wafer-to-wafer uniformity of W layers deposited by CVD, employing N.sub.2 for increased reflectivity, is significantly improved by omitting N.sub.2 during at least a portion of deposition. Embodiments include depositing a W nucleation layer on a TiN layer employing gaseous WF.sub.6 during a nucleation phase, omitting WF.sub.6 during an interposition phase during which substantially no W deposition occurs, depositing a W layer employing gaseous WF.sub.6 during a main deposition phase, flowing N.sub.2 gas at least during the terminal portion of the main deposition phase and omitting N.sub.2 gas during at least a portion of the nucleation phase and/or interposition phase, e.g., omitting N.sub.2 gas during the entire interdeposition phase.

REFERENCES:
patent: 5028565 (1991-07-01), Chang et al.
patent: 5332691 (1994-07-01), Kinoshita et al.
patent: 5407698 (1995-04-01), Emesh

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